Mg-doped ZnO films prepared by chemical bath deposition
نویسندگان
چکیده
منابع مشابه
Effect of growth time on Ti-doped ZnO nanorods prepared by low-temperature chemical bath deposition
Ti-doped ZnO nanorod arrays were grown onto Si substrate using chemical bath deposition (CBD) method at 93 °C. To investigate the effect of time deposition on the morphological, and structural properties, four Ti-doped ZnO samples were prepared at various deposition periods of time (2, 3.5, 5, and 6.5 h). FESEM images displayed high-quality and uniform nanorods with a mean length strongly depen...
متن کاملEffect of growth time on ZnO thin films prepared by low temperature chemical bath deposition on PS substrate
ZnO thin films were successfully synthesized on a porous silicon (PS) substrate by chemical bathdeposition method. X-ray diffraction (XRD), field-emission scanning electron microscopy (FESEM),and photoluminescence (PL) analyses were carried out to investigate the effect of growth duration(3, 4, 5, and 6 h) on the optical and structural properties of the aligned ZnO nanorods. T...
متن کاملElectrical and optical properties of Al-doped ZnO and ZnAl2O4 films prepared by atomic layer deposition
ZnO/Al2O3 multilayers were prepared by alternating atomic layer deposition (ALD) at 150°C using diethylzinc, trimethylaluminum, and water. The growth process, crystallinity, and electrical and optical properties of the multilayers were studied with a variety of the cycle ratios of ZnO and Al2O3 sublayers. Transparent conductive Al-doped ZnO films were prepared with the minimum resistivity of 2....
متن کاملCharacterization of gallium-doped CdS thin films grown by chemical bath deposition
Ga-doped CdS thin films, with different [Ga]/[Cd] ratios, were grown using chemical bath deposition. The effect of Ga-doping on optical properties and bandgap of CdS films is investigated. Resistivity, carrier density, and mobility of doped films were acquired using Hall effect measurements. Crystal structure as well as crystal quality and phase transition were determined using X-ray diffractio...
متن کاملGrowth and Characterization of Thin MoS2 Films by Low- Temperature Chemical Bath Deposition Method
Transition metal dichalcogenide (TMDC) materials are very important inelectronic and optical integrated circuits and their growth is of great importance in thisfield. In this paper we present growth and fabrication of MoS2 (Molibdan DiSulfide)thin films by chemical bath method (CBD). The CBD method of growth makes itpossible to simply grow large area scale of the thin la...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal of Materials Science
سال: 2018
ISSN: 0022-2461,1573-4803
DOI: 10.1007/s10853-017-1959-8